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# Dr. Rajan Singh

### Papers Published

### Subjects Taught

### Books Published

Designation | Associate Professor |

Years of Experience | 16 Years |

Department | ECE |

Email Id | rajansingh@mlrinstitutions.ac.in |

JNTUH Unique Id | 8190-2202425-165633 |

Areas of Specialization | Microelctronics and VLSI |

UG Degree | B.Tech, Electronics and Communication Engineering (2000) |

PG Degree | M.Tech, VLSI Design (2009) |

Ph.D | Microelectronics and VLSI |

Joining Date | 4/11/2022 |

Nature of Association | Regular |

List of Publications:

First Authored Journal Articles:

[1] Rajan Singh, G. P. Rao, T. R. Lenka, S. V. S. Prasad, N. El. I. Boukortt, G. Crupi, H. P. T. Nguyen, “Design and Simulation of T-Gate AlN/β-Ga2O3 HEMT for DC, RF and High-Power

Nanoelectronics Switching Applications,” International Journal of Numerical Modelling:

Electronic Networks, Devices and Fields (Wiley), Accepted for publication, 19/06/2023, Q3,

(SCI)

[2] R. Singh, T. R. Lenka, D. K. Panda, H. P. T. Nguyen, N. E I Boukortt, G. Crupi, “Analytical

Modeling of IV characteristics using 2D Poisson Equations in AlN/Beta-Ga 2 O 3 HEMT,” Materials Science in Semiconductor Processing (Elsevier), Volume 145, 2022, 106627, ISSN 1369-8001, DOI:10.1016/j.mssp.2022.106627. [IF:3.927], Q1, (SCI).

[3] R. Singh, T. R. Lenka, D. K. Panda, and H. P. T. Nguyen, “Investigation of β-Ga 2 O 3 -based HEMTs using 2D Simulations for low noise amplification and RF applications,” Engineering Research Express (IOP Science), 3(3), p.035042, 2021. DOI: 10.1088/2631-8695/ac23b3, [IF:1.21], Q3, (Scopus)

[4] R. Singh, T. R. Lenka, and H. P. T. Nguyen, “Analytical Study of Conduction Band Discontinuity Supported 2DEG Density in AlN/β-Ga 2 O 3 HEMT,” Facta Universitatis, Series: Electronics and Energetics, Vol. 34, No. 3, May 2021. DOI:10.2298/FUEE2103323S, [IF: 0.23], (ESCI, Scopus)

[5] R. Singh, T. R. Lenka, D. K. Panda, R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P. T. Nguyen, “The Dawn of Ga 2 O 3 HEMTs for High Power Electronics-A Review,” Materials Science in

Semiconductor Processing (Elsevier), Vol. 119, 105216, 2020. DOI: 10.1016/j.mssp.2020.105216. [IF: 3.927], Q1, (SCI).

[6] R. Singh, T. R. Lenka, and H. P. T. Nguyen, “Optimization of Dynamic Source Resistance in Novel β-Ga 2 O 3 HEMT and its Effect on Electrical Characteristics,” Journal of Electronic Materials (Springer), Vol. 49, No. 9, pp. 5266-5271, June 2020. DOI: 10.1007/s11664-020-08261-0. [IF:1.938], Q2, (SCI).

[7] R. Singh, T. R. Lenka, and H. P. T. Nguyen, “A novel β-Ga 2 O 3 HEMT with f T of 166 GHz and X- band P OUT of 2.91 W/mm,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Wiley), Vol.34, Issue 1, 2020. DOI:10.1002/jnm.2794. [IF: 1.296], Q3, (SCI).

[8] R. Singh, T. R. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P. T. Nguyen, “Investigation of Current Collapse and Recovery Time due to Deep Level Defect Traps in β-Ga 2 O 3 HEMT,” Journal of Semiconductors (IOP Science), Vol. 41, No. 10, pp. 102802:1-4, 2020. DOI: 10.1088/1674- 4926/41/10/102802 [IF: 0.418] Q2, (ESCI, Scopus).

Co-Authored Journal Articles

[1] G. Purnachandra Rao, Trupti Ranjan Lenka, Rajan Singh, Nour El. I. Boukortt, Sharif Md. Sadaf, and Hieu Pham Trung Nguyen, “Comparative Study of III‑Nitride Nano‑HEMTs on Different Substrates for Emerging High‑Power Nanoelectronics and Millimetre Wave Applications”, J. Electron. Mater. (2022). DOI: 10.1007/s11664-022-10145-4, Q2, (SCI).

[2] G. P. Rao, R. Singh, T. R. Lenka, NEI Boukortt, and HPT Nguyen, “Simulation modelling of III- Nitride/β-Ga 2 O 3 Nano-HEMT for microwave and millimetre wave applications,” Int J RF Microw Comput Aided Eng. 2022;e23416. DOI:10.1002/mmce.23416, Q2, (SCI).

[3] G. Purnachandra Rao, R. Singh, Trupti Ranjan Lenka, and Hieu Pham Trung Nguyen, “Simulation Modelling of III-Nitride/β-Ga 2 O 3 HEMT for Emerging High-Power Nanoelectronics Applications,” J. Korean Phys. Soc. (2022) (Springer), DOI: 10.1007/s40042-022-00603-x, Q4, (SCI).

[4] D. K. Panda, T. R. Lenka, R. Singh, V. Goyal, N. El. I. Boukortt and H. P. T. Nguyen, “Analytical Modeling of Dielectric Modulated Negative Capacitance MoS 2 FET for Next-Generation Label-Free Biosensor,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Wiley), Vol. 35, No. 5, pp. 1-14, [IF: 1.436], DOI: 10.1002/jnm.3060 Q3, (SCI).

[5] T. R. Lenka, R. Singh, S. K. Tripathy, V. Goyal, T. K. Nguyen and H. P. T. Nguyen, “2DEG

Characteristics of InAlAs/InP based HEMTs by Solving Schrödinger and Poisson Equations followed by Device Characteristics,” International Journal of Numerical Modelling: Electronic

Networks, Devices and Fields (Wiley), Vol. 35, No. 1, pp. 1-12, 2021. DOI:10.1002/jnm.2941. [IF: 1.436], Q3, (SCI).

[6] D. K. Panda, R. Singh, T. R. Lenka, T. T. Pham, R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P. T.

Nguyen, “Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise

amplifiers: a comparative study,” IET Circuits, Devices & Systems, 14(7), Nov. 2020, pp.1018- 1025.swx, DOI:10.1049/iet-cds.2020.0015. [IF: 1.63], Q3, (SCI).

[7] D. Singh, and R. Singh, “Stochastic optimization method for signalized traffic signal

systems,” International Journal of Knowledge-Based and Intelligent Engineering Systems, 13(2), IOS Press, Jan. 2009, pp.71-77. DOI:10.3233/JAD-2009-0175. [Citescore: 3.4], Q3, (ESCI).

Conferences:

[1] Rajan Singh, Bittu Kumar, Kiran Dasari, SVS Prasad, Kota Maneela, Bhagavathi Gadi, 2022, “Designing of Ternary to Binary Half Adder Using CMOS,” 5 th International Conference on VLSI, Communication and Signal Processing (VCAS 2022), Prayagraj, UP, India, Springer, (In Press)

[2] S. V. S. Prasad, Rajan Singh, D. Laxma Reddy, Sandha Akshara, V Sumanth, 2022, “Fake Content Detection Using Python and Machine Learning” International Conference on Advancements in Smart, Secure and Intelligent Computing (ASSIC), 19-20 November 2022, KIIT, Bhubaneswar, India, (IEEE Xplore), (In Press)

[3] Rajan Singh, G. Purnachandra Rao, Trupti Ranjan Lenka, S V S Prasad, Kiran Dasari, Pulkit Singh, and Hieu Pham Trung Nguyen, 2023, “Investigation of Normally-off β-Ga2O3 Power MOSFET using Ferroelectric Gate” International Conference on Micro/Nanoelectronics Devices, Circuits and Systems (MNDCS-2023), 29-31 Jan 2023, NIT Silchar, Assam, India, Springer, (In Press)

[4] K. K. Harika, Rajan Singh, S V S Prasad, V. Charitha and A. Sravani, 2022, “Image Caption Generator Using Deep Learning” International Conference on Advancements in Smart, Secure and Intelligent Computing (ASSIC), 19-20 November 2022, KIIT, Bhubaneswar, India, (IEEE Xplore), (In Press)

[5] R. Singh, K. N. Rao, R. Naik, Geetha, K. Anjali and P. Vineeth, "Smart Trolley Using Automated Billing Interface," 2022 International Conference on Advancements in Smart, Secure and Intelligent Computing (ASSIC), Bhubaneswar, India, 2022, pp. 1-5, doi: 10.1109/ASSIC55218.2022.10088393.

[6] Pulumati Chidananda Datta, Chappa Vinay Kumar, Rajan Singh, and Kavicharan Mummaneni, “ Optimized RTL Design of a Vending Machine Through FSM Using Verilog HDL,” Lecture Notes in Electrical Engineering, Volume 904, DOI:10.1007/978-981-19-2308-1_32, ISSN: 1876-1100, ISBN: 978-981-19-2307-4, Select Proceedings of MNDCS 2022.

[7] R. Singh, T. R. Lenka, S. A. Ahsan, and H. P. T. Nguyen, “Analytical Study of Conduction Band Discontinuity Supported 2DEG Density in AlN/β-Ga 2 O 3 HEMT,” International Conference on Micro/Nanoelectronics Devices, Circuits and Systems (MNDCS-2021), 29-30 Jan 2021.

[8] R. Singh, T. R. Lenka, Ravi T. Velpula, Ha Quoc Thang Bui and Hieu P. T. Nguyen, “Investigation of E-Mode Beta-Gallium ode Beta-Gallium Oxide MOSFET for Emerging Nanoelectronics,” IEEE Nanotechnology Materials and Devices Conference 2019 (IEEE NMDC 2019), 27-30 Oct 2019, Stockholm, Sweden. (IEEE Xplore)

[9] H. Sharma, and R. Singh, “Comparative power analysis of CMOS & adiabatic logic gates,” International Conference on Green Computing and Internet of Things (ICGCIoT), Oct. 2015, (pp. 7-11). (IEEE Xplore).

[10] H. Sharma, and R. Singh, “Design of a low power Adiabatic Logic based Johnson Counter,” International Conference on Green Computing and Internet of Things (ICGCIoT), Oct. 2015, (pp. 270-274). (IEEE Xplore).

Signals and Systems, Electromagnetics, Digital System Design, VLSI Design

Book Chapters:

[1] R. Singh, T. R. Lenka, D. Panda, R. T. Velpula, B. Jain, H. Q. T. Bui, H. P. T. Nguyen, “Ga 2 O 3 Based Heterostructure FETs (HFETs) for Microwave and Millimeter-Wave Applications,” Emerging Trends in Terahertz Engineering and System Technologies: Devices, Materials, Imaging, Data Acquisition and Processing (Springer Nature), pp. 209-227, 2021. DOI: 10.1007/978-981-15-9766-4_11 (Scopus) (ISBN: 978-981-15-9766-4)

[2] R. Singh, T. R. Lenka, D. K. Panda, R. T. Velpula, B. Jain, H. Q. T. Bui, H. P. T. Nguyen, “RFPerformance of Ultra-wide bandgap HEMTs” Emerging Trends in Terahertz Solid-State Physics and Devices (Springer Nature), pp. 49-63, Mar 2020. DOI: 10.1007/978-981-15-3235-1. (Scopus) (ISBN: 978-981-15-3235-1)

[3] R. Singh, T. R. Lenka, and Hieu P. T. Nguyen, “3D Simulation Study of Laterally-Gated AlN/β- Ga 2 O 3 HEMT Technology for RF and High Power Nanoelectronics,” HEMT Technology and Applications (Springer Nature), pp. 93-103, June 2022. DOI: 10.1007/978-981-19-2165-0. (Scopus) (ISBN: 978-981-19-2164-3)

[4] R. Singh, T. R. Lenka, and Hieu P. T. Nguyen, “Evolution and Present State-of-Art Gallium Oxide HEMTs–The Key Takeaways,” HEMT Technology and Applications (Springer Nature), pp. 209-219, June 2022. DOI: 10.1007/978-981-19-2165-0. (Scopus) (ISBN: 978-981-19-2164-3)

[5] G. P. Rao, Rajan Singh, and T. R. Lenka, “Operation Principle of AlGaN/GaN HEMT,” HEMT Technology and Applications (Springer Nature), pp. 105-114, June 2022. DOI: 10.1007/978-981-19-2165-0. (Scopus) (ISBN: 978-981-19-2164-3)

[6] G. P. Rao, Rajan Singh, and T. R. Lenka, “Performance Analysis of AlGaN/GaN HEMT for RF and Microwave Nanoelectronics Applications,” HEMT Technology and Applications (Springer Nature), pp. 139-153, June 2022. DOI: 10.1007/978-981-19-2165-0. (Scopus) (ISBN: 978-981-19-2164-3)

[7] Y. K. Verma, Rajan Singh, and T. R. Lenka, “Figures-of-Merits of AlN/β-Ga 2 O 3 High Electron Mobility Transistor,” HEMT Technology and Applications (Springer Nature), pp. 221-231, June 2022. DOI: 10.1007/978-981-19-2165-0. (Scopus) (ISBN: 978-981-19-2164-3)